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Toshiba Reports Advances in MRAM Memory

The 52nd conference on magnetism and magnetic materials ended in the USA today. At this event, Toshiba Corporation shared its advances in Magnetoresistive Random Access Memory (MRAM), a technology tipped for the next generation of universal memory. According to the company, it has already managed to release a workable MRAM memory, which uses new technologies presented at the conference, confirming in practice the correctness of the chosen path.

Recall that the advantages of MRAM include high performance and reliability, low power consumption. In theory, MRAM has great potential for increasing storage density because the memory cell structure (shown in the diagram) is relatively simple.

In short, Toshiba has been able to field-test the applicability of Spin Torque Transfer Switching and Perpendicular Magnetic Anisotropy (PMA) technology in a tunnel magnetoresistive element (MTJ), a key component of a memory cell.

Switching by the transfer of spin torque is based on the property of the electron spin to change the sign of the magnetization to the opposite. This technology is considered by many experts to be the main candidate for use in the memory of the future, since it makes it possible to record data with very low energy consumption. In turn, PMA gives the magnetization a direction perpendicular to the magnetic layer, in contrast to the parallel orientation of the magnetization characteristic of layers with in-plane anisotropy. This technology is increasingly being used to increase the recording density of hard magnetic disks. Toshiba has succeeded in applying it to semiconductor memory.

Sources: Toshiba, TechOn!

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