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Carbon transistors have caught up with their silicon predecessors
Semiconductor fabrication at room temperature could provide very large panels and reduce the cost of products such as disposable RFID tags. But most transistors created under such conditions have negligible electron mobility.
Researchers at Georgia Institute of Technology are said to have succeeded in developing a method for making transistors at room temperature that are 100 times faster than previously created designs. Simply put, the new transistors have caught up with their amorphous silicon counterparts.
The secret of the development was the use of thin films made of carbon-60 (C60) material, also known as fullerene, in the channels of transistors.
Scientists do not claim to be the first researchers to use C60 in transistors manufactured at room temperature, but they were the first to demonstrate the high electron mobility in such devices and propose a technology for manufacturing transistors with high repeatability of results.
The demonstration device was fabricated on a silicon substrate for convenience, but all of its elements are made of organic materials and C60 at room temperature. The metal electrode was added using the same process that is used in the production of OLEDs and plastic solar cells.
In the future, the researchers intend to move to plastic substrates and demonstrate the possibility of making transistors with n- and p-type channels, which will allow the creation of electronic circuits similar to those currently manufactured using CMOS technology.
There was a fly in the ointment in the ointment – the new transistors are extremely sensitive to oxygen. However, the solution to this problem may lie in the use of sealed housings.
Source: Georgia Institute of Technology